SAM L10/L11 Data Flash

Data Flash Description

SAM L10/L11 devices embed 2 kB of internal Data Flash with Write-While-Read (WWR) capability mapped at address 0x00400000.

The Data Flash can be programmed or erased while reading the Flash memory. It is not possible to read the Data Flash while writing or erasing the Flash.

The Data Flash memory can be executable but requires more cycles to be read which may affect system performance.


The Data Flash cannot be cached. The Data Flash is organized into rows, where each row contains four pages. The Data Flash has a row- erase and a page-write granularity.

Related Peripheral

The related peripheral to the Data Flash is the NVM Controller (NVMCTRL).

Related Sections

 
Data Flash Security Features
Learn more >
 
SAM L11 Data Flash Scrambling
Learn more >
© 2024 Microchip Technology, Inc.
Notice: ARM and Cortex are the registered trademarks of ARM Limited in the EU and other countries.
Information contained on this site regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer's risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights.