SAM L10/L11 Data Flash

Data Flash Description

SAM L10/L11 devices embed 2 kB of internal Data Flash with Write-While-Read (WWR) capability mapped at address 0x00400000.

The Data Flash can be programmed or erased while reading the Flash memory. It is not possible to read the Data Flash while writing or erasing the Flash.

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The Data Flash memory can be executable but requires more cycles to be read which may affect system performance.


The Data Flash cannot be cached. The Data Flash is organized into rows, where each row contains four pages. The Data Flash has a row- erase and a page-write granularity.

Related Peripheral

The related peripheral to the Data Flash is the NVM Controller (NVMCTRL).

Related Sections

 
Data Flash Security Features
Learn more >
 
SAM L11 Data Flash Scrambling
Learn more >
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References:

SAM L10 L11 family page

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